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| www.irf.com 1 hexfet ? power mosfet pd - 97683 AUIRFR1010Z automotive grade descriptionspecifically designed for automotive applications, this hexfet ? power mosfet utilizes the latest processing techniques to achieve extremely lowon-resistance per silicon area. additional features of this design are a 175c junction operating temperature, fast switching speed and improved repetitive avalanche rating . these features com- bine to make this design an extremely efficient and reliable device for use in automotive applications and a wide variety of other applications. features advanced process technology low on-resistance 175c operating temperature fast switching repetitive avalanche allowed up to tjmax lead-free, rohs compliant automotive qualified * gds gate drain source d-pak AUIRFR1010Z s d g absolute maximum ratingsstresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. the thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (t a ) is 25c, unless otherwise specified. hexfet ? is a registered trademark of international rectifier. * qualification standards can be found at http://www.irf.com/ v dss 55v r ds(on) typ. 5.8m max. 7.5m i d (silicon limited) 91a i d (package limited) 42a parameter units i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, vgs @ 10v (silicon limited) a i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation w linear derating factor w/c v gs gate-to-source voltage v e as single pulse avalanche energy (thermally limited) mj e as (tested ) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t j operating junction and t stg storage temperature range c soldering temperature, for 10 seconds (1.6mm from case ) thermal resistance parameter typ. max. units r jc junction-to-case CCC 1.11 r ja junction-to-ambient (pcb mount) CCC 40 c/w r ja junction-to-ambient CCC 110 -55 to + 175 300 140 0.9 20 max. 9165 360 42 220 110 see fig.12a, 12b, 15, 16 downloaded from: http:///
2 www.irf.com s d g repetitive rating; pulse width limited by max. junction temperature. (see fig. 11). limited by t jmax , starting t j = 25c, l = 0.13mh r g = 25 , i as = 42a, v gs =10v. part not recommended for use above this value. pulse width 1.0ms; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . limited by t jmax , see fig.12a, 12b, 15, 16 for typical repetitive avalanche performance. this value determined from sample failure population.100% tested to this value in production. when mounted on 1" square pcb (fr-4 or g-10 material) . for recommended footprint and soldering techniques refer to application note #an-994 static electrical @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units v (br)dss drain-to-source breakdown voltage 55 CCC CCC v ? v (br)dss / ? t j breakdown voltage temp. coefficient CCC 0.051 CCC v/c r ds(on) static drain-to-source on-resistance CCC 5.8 7.5 m v gs(th) gate threshold voltage 2.0 CCC 4.0 v gfs forward transconductance 31 CCC CCC s i dss drain-to-source leakage current CCC CCC 20 a CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 200 na gate-to-source reverse leakage CCC CCC -200 dynamic electrical @ t j = 25c (unless otherwise specified) symbol parameter min. typ. max. units q g total gate charge CCC 63 95 q gs gate-to-source charge CCC 17 CCC nc q gd gate-to-drain ("miller") charge CCC 23 CCC t d(on) turn-on delay time CCC 17 CCC t r rise time CCC 76 CCC t d(off) turn-off delay time CCC 42 CCC ns t f fall time CCC 48 CCC l d internal drain inductance CCC 4.5 CCC between lead, nh 6mm (0.25in.) l s internal source inductance CCC 7.5 CCC from package and center of die contact c iss input capacitance CCC 2840 CCC c oss output capacitance CCC 470 CCC c rss reverse transfer capacitance CCC 250 CCC pf c oss output capacitance CCC 1630 CCC c oss output capacitance CCC 360 CCC c oss eff. effective output capacitance CCC 560 CCC diode characteristics symbol parameter min. typ. max. units i s continuous source current CCC CCC 42 (body diode) a i sm pulsed source current CCC CCC 360 (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 24 36 ns q rr reverse recovery charge CCC 20 30 nc t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) v gs = 20v v gs = -20v v ds = 44v v ds = 25v, i d = 42a i d = 42a conditions conditions v gs = 10v v gs = 0v v ds = 25v ? = 1.0mhz v gs = 0v, v ds = 1.0v, ? = 1.0mhz v gs = 0v, v ds = 44v, ? = 1.0mhz v gs = 0v, v ds = 0v to 44v mosfet symbol showing the integral reverse p-n junction diode. t j = 25c, i s = 42a, v gs = 0v t j = 25c, i f = 42a, v dd = 28v di/dt = 100a/ s conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 42a v ds = v gs , i d = 100 a v ds = 55v, v gs = 0v v ds = 55v, v gs = 0v, t j = 125c v gs = 10v v dd = 28v i d = 42a r g = 7.6 downloaded from: http:/// www.irf.com 3 !"#"$ $ % & &' & qualification information ? d-pak msl1 qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. charged device model class c5 (+/- 2000v) ??? aec-q101-005 moisture sensitivity level rohs compliant yes esd machine model class m4 (+/- 700v) ??? aec-q101-002 human body model class h1c (+/- 1500v) ??? aec-q101-001 downloaded from: http:/// 4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 4. typical forward transconductance vs. drain current 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 60 s pulse width tj = 25c 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 60 s pulse width tj = 175c 4.5v 2 4 6 8 10 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 25v 60 s pulse width 0 2 04 06 08 01 0 0 i d ,drain-to-source current (a) 0 20 40 60 80 100 120 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 10v 380 s pulse width downloaded from: http:/// www.irf.com 5 fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 v sd , source-to-drain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 v ds , drain-to-source voltage (v) 0 1000 2000 3000 4000 5000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 0 2 04 06 08 01 0 0 q g total gate charge (nc) 0 4 8 12 16 20 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 44v vds= 28v vds= 11v i d = 42a 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 10000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc nce downloaded from: http:/// 6 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10. normalized on-resistance vs. temperature 25 50 75 100 125 150 175 t c , case temperature (c) 0 20 40 60 80 100 i d , d r a i n c u r r e n t ( a ) limited by package -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 42a v gs = 10v 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc ri (c/w) i (sec) 0.3854 0.0002510.3138 0.001092 0.4102 0.015307 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 c ci i / ri ci= i / ri downloaded from: http:/// www.irf.com 7 q g q gs q gd v g charge "#( fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as fig 14. threshold voltage vs. temperature r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 1k vcc dut 0 l 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 100 200 300 400 500 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 7.6a 11a bottom 42a -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 1.0ma i d = 250 a i d = 100 a downloaded from: http:/// 8 www.irf.com fig 15. typical avalanche current vs.pulsewidth fig 16. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 15, 16:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 12a, 12b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. ? t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 15, 16). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 1000 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav assuming ? tj = 25c due to avalanche losses 0.01 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 42a downloaded from: http:/// www.irf.com 9 fig 17. )*+ ',' - for n-channel hexfet power mosfets ? ? ? p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-appliedvoltage reverserecovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period . !" # !$ $ # . + - + + + - - - ? ! ? " #$## ? % & & ? #$##' $ v ds 90%10% v gs t d(on) t r t d(off) t f ( ) 1 * % 0.1 % %&%% + - fig 18a. switching time test circuit fig 18b. switching time waveforms downloaded from: http:/// 10 www.irf.com ! !" #### + /0/ 1101 *1* 0 '234 ) 5 3 & 3 downloaded from: http:/// www.irf.com 11 $ % tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch downloaded from: http:/// 12 www.irf.com ordering information base part number package type standard pack complete part number form quantity AUIRFR1010Z dpak tube 75 AUIRFR1010Z tape and reel 2000 AUIRFR1010Ztr tape and reel left 3000 AUIRFR1010Ztrl tape and reel right 3000 AUIRFR1010Ztrr downloaded from: http:/// www.irf.com 13 ! " # $ % # $ $ $ # $ # " " # & '(!) * # " + ( , - - " . +" + * " " /* "# + $ " " % . 0 $ # + " " $ $ $ 1 # " , # " " # # * " # # " $ $ 0 " "$ $ " , " " 2 3" " 0 $3" " $ " $ $ $ $ $ $ * $ " $ " "$" , " 0 $# 4" " " 5 ( " 5( !2 $ 5( " + " " $ 3" " " 5( "1 $ + " $ " 3" - " " " + # # " 24.267898 + '(!) 3" $ " "1 # $ " + 4 2 - ! '% $ ($%) * "+) + ,- . /01 , ,23 downloaded from: http:/// |
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